BTX18-200 Просмотр технического описания (PDF) - Comset Semiconductors
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Компоненты Описание
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BTX18-200 Datasheet PDF : 4 Pages
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BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
Symbol
IRM
IDM
IL
IH
Ratings
Peak Reverse Current
VRM=VRWmax ; Tj=125°C
Peak off-state Current
VDM=VDWmax ; Tj=125°C
Latching current, Tj=125°C
Holding Current ; Tj=25°C
BTX18 BTX18 BTX18 BTX18 BTX18
-100 -200 -300 -400 -500
<
800 400 275 200 160 µA
<
800 400 275 200 160 µA
Typ : 10
mA
<
5.0 ²)
mA
Gate to Cathode – Characteristics
Symbol
Ratings
VGT
Voltage that will trigger all devices
Tj=25°C
>
VGD
Voltage that will not trigger any device
Tj=125°C
<
IGT
Current that vill trigger all devices
Tj=25°C
>
Switching Characteristics
BTX18 BTX18 BTX18 BTX18 BTX18
-100 -200 -300 -400 -500
2.0
V
200
mV
5.0
mA
Symbol
Ratings
BTX18 BTX18 BTX18 BTX18 BTX18
-100 -200 -300 -400 -500
Turn off time when switched from
IT=300 mA to IR=175 mA
Tj=25°C
tq
Tj=125°C
IDM
Peak off-state Current
VDM=VDWmax ; Tj=125°C
<
Type : 20
µs
Typ : 35
800 400 275 200 160 µs
1) VT is measured along the leads at 1 cm from the case
2) Measurer under the following conditiond :
Anode sypply voltage= +6.0V
Initial on-state current after gate triggering= 50mA
The current is reduced until the device turns of.
COMSET SEMICONDUCTORS
3/4
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