BTX18-300 Просмотр технического описания (PDF) - Comset Semiconductors
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BTX18-300 Datasheet PDF : 4 Pages
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BTX18-100/BTX18-200/BTX18-300
BTX18-400/BTX18-500
SILICON THYRISTORS
The BTX18 series is a range of p-gate reverse blocking thyristors, in a
TO-39 metal enveloppe, intended for use in general low power
applications up to a A average on-state current.
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Anode to Cathode - Ratings
Voltage 1)
Symbol
VR
VRWM
VRRM
VRSM
VDWM
VD
VDRM
VDSM
Currents
Symbol
IT(AV)
IT
IT(RMS)
Ratings
Continuous Reverse Voltage
BTX18- BTX18- BTX18- BTX18- BTX18-
100
200
300
400
500
100 200 300 400 500 V
Crest Working Reverse Voltage
100 200 300 400 500 V
Repetitive Peak Reverse Voltage
(δ = 0.01 ; f=50Hz)
120 240 350 500 600 V
Non-repetitive peak reverse voltage
(t<10ms)
120
240
350
500
600 V
Crest Working off-state Voltage
100 200 300 400 500 V
Continuous off-state Voltage
Repetitive peak off-state voltage
(δ = 0.01 ; f=50Hz)
Non-repetitive peak off-state voltage
(t<10ms)
100 200 300 400 500 V
120 240 350 500 600 V²)
120 240 350 500 600 V²)
Ratings
BTX18- BTX18- BTX18- BTX18- BTX18-
100
200
300
400
500
Average on-state current TCASE=105°C
Max : 1.0
A
(averaged over any 20 TAMB=60°C, in
ms period)
free air
Max : 250
mA
On-state Current (D.C.)
TCASE=100°C
Max : 1.6
A
RMS on-state Current
Max : 1.6
A
COMSET SEMICONDUCTORS
1/4
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