HIN232CB-T Просмотр технического описания (PDF) - Intersil
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HIN232CB-T Datasheet PDF : 20 Pages
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HIN232, HIN236, HIN237, HIN238, HIN239, HIN240, HIN241
Die Characteristics
DIE DIMENSIONS
160 mils x 140 mils
METALLIZATION
Type: Al
Thickness: 10kÅ ±1kÅ
SUBSTRATE POTENTIAL
V+
Metallization Mask Layout
R2IN
T2OUT T1OUT
PASSIVATION
Type: Nitride over Silox
Nitride Thickness: 8kÅ
Silox Thickness: 7kÅ
TRANSISTOR COUNT
238
PROCESS
CMOS Metal Gate
HIN240
T3OUT T4OUT R3IN
R3OUT T5IN
R2OUT
T2IN
T1IN
R1OUT
SHUTDOWN
EN
T5OUT
R4IN
R1IN
GND
VCC
C1+ V+
C1-
C2+
13
C2-
V-
R4OUT
T4IN
T3IN
R5OUT
R5IN
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