HFA16PB120 Просмотр технического описания (PDF) - Vishay Semiconductors
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HFA16PB120 Datasheet PDF : 7 Pages
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HFA16PB120
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 16 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
1200
IF = 16 A
-
Maximum forward voltage
VFM
IF = 32 A
See fig. 1
-
IF = 16 A, TJ = 125 °C
-
Maximum reverse
leakage current
VR = VR rated
-
IRM
See fig. 2
TJ = 125 °C, VR = 0.8 x VR rated
-
Junction capacitance
CT
VR = 200 V
See fig. 3
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
2.5
3.2
2.3
0.75
375
27
8.0
MAX.
-
3.0
3.93
2.7
20
2000
40
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5, 10
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1
TJ = 25 °C
trr2
TJ = 125 °C
-
30
-
90
-
164
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during tb
See fig. 8
IRRM1
IRRM2
Qrr1
Qrr2
dI(rec)M/dt1
dI(rec)M/dt2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 16 A
dIF/dt = 200 A/µs
VR = 200 V
-
5.8
-
8.3
-
260
-
680
-
120
-
76
MAX.
-
135
245
10
15
675
1838
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Tlead
RthJC
0.063" from case (1.6 mm) for 10 s
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
RthJA
RthCS
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-247AC modified (JEDEC)
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
0.83
UNITS
°C
-
80
K/W
0.50
-
2.0
-
0.07
-
12
-
(10)
HFA16PB120
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93071
Revision: 30-Jul-08
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