HFA04TB60 Просмотр технического описания (PDF) - Vishay Semiconductors
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HFA04TB60 Datasheet PDF : 6 Pages
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HFA04TB60
Vishay High Power Products
HEXFRED®
Ultrafast, Soft Recovery Diode, 4 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Cathode to anode
breakdown voltage
VBR
IR = 100 µA
600
IF = 4.0 A
-
Maximum forward voltage
VFM
IF = 8.0 A
See fig. 1
-
IF = 4.0 A, TJ = 125 °C
-
Maximum reverse
leakage current
VR = VR rated
-
IRM
See fig. 2
TJ = 125 °C, VR = 0.8 x VR rated
-
Junction capacitance
CT
VR = 200 V
See fig. 3
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
1.5
1.8
1.4
0.17
44
4.0
8.0
MAX.
-
1.8
2.2
1.7
3.0
300
8.0
-
UNITS
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
See fig. 5, 6 and 16
trr
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V
trr1
TJ = 25 °C
trr2
TJ = 125 °C
-
17
-
28
-
38
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 4 A
dIF/dt = 200 A/µs
VR = 200 V
-
2.9
-
3.7
-
40
-
70
Peak rate of fall of recovery
current during tb
See fig. 11 and 12
dI(rec)M/dt1 TJ = 25 °C
dI(rec)M/dt2 TJ = 125 °C
-
280
-
235
MAX.
-
42
57
5.2
6.7
60
105
-
-
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Tlead
RthJC
RthJA
RthCS
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Mounting surface, flat, smooth and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
MAX.
300
5.0
UNITS
°C
-
80
K/W
0.5
-
2.0
-
0.07
-
12
-
(10)
HFA04TB60
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93032
Revision: 30-Jul-08
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