HEF4001BPB Просмотр технического описания (PDF) - Philips Electronics
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HEF4001BPB Datasheet PDF : 3 Pages
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Philips Semiconductors
Quadruple 2-input NOR gate
AC CHARACTERISTICS
VSS = 0 V; Tamb = 25 °C; CL = 50 pF; input transition times ≤ 20 ns
VDD
V
SYMBOL TYP
MAX
Propagation delays
In → On
HIGH to LOW
LOW to HIGH
Output transition times
HIGH to LOW
LOW to HIGH
5
60
120
10
tPHL
25
50
15
20
40
5
50
100
10
tPLH
25
45
15
20
35
5
60
120
10
tTHL
30
60
15
20
40
5
60
120
10
tTLH
30
60
15
20
40
Product specification
HEF4001B
gates
TYPICAL EXTRAPOLATION
FORMULA
ns 33 ns + (0,55 ns/pF) CL
ns 14 ns + (0,23 ns/pF) CL
ns 12 ns + (0,16 ns/pF) CL
ns 23 ns + (0,55 ns/pF) CL
ns 14 ns + (0,23 ns/pF) CL
ns 12 ns + (0,16 ns/pF) CL
ns 10 ns + (1,0 ns/pF) CL
ns
9 ns + (0,42 ns/pF) CL
ns
6 ns + (0,28 ns/pF) CL
ns 10 ns + (1,0 ns/pF) CL
ns
9 ns + (0,42 ns/pF) CL
ns
6 ns + (0,28 ns/pF) CL
Dynamic power
dissipation per
package (P)
VDD
V
TYPICAL FORMULA FOR P (µW)
5
1100 fi + ∑ (foCL) × VDD2
where
10
5000 fi + ∑ (foCL) × VDD2
fi = input freq. (MHz)
15
14 200 fi + ∑ (foCL) × VDD2
fo = output freq. (MHz)
CL = load capacitance (pF)
∑(foCL) = sum of outputs
VDD = supply voltage (V)
January 1995
3
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