HBC517 Просмотр технического описания (PDF) - Hi-Sincerity Mocroelectronics

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HBC517

NPN EPITAXIAL PLANAR TRANSISTOR

Hi-Sincerity Mocroelectronics 

HI-SINCERITY

MICROELECTRONICS CORP.

HBC517

NPN EPITAXIAL PLANAR TRANSISTOR

Spec. No. : HA200217

Issued Date : 2002.09.01

Revised Date : 2005.02.04

Page No. : 1/4

Description

General Purpose High Darlington Transistor

Absolute Maximum Ratings

TO-92

• Maximum Temperatures

Storage Temperature ........................................................................................................................... -55 ~ +150 °C

Junction Temperature ................................................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW

• Maximum Voltages and Currents (TA=25°C)

VCBO Collector to Base Voltage ........................................................................................................................... 40 V

VCEO Collector to Emitter Voltage ........................................................................................................................ 30 V

VEBO Emitter to Base Voltage .............................................................................................................................. 10 V

IC Collector Current ........................................................................................................................................ 500 mA

Electrical Characteristics (TA=25°C)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE(sat)

Current Gain Bandwidth Product

fT

Collector Output Capacitance

Cob

Test Condition

Min. Typ. Max. Unit

IC=0.1mA, IE=0

IC=10mA, IB=0

IE=1mA, IC=0

VCB=40V, IE=0

VEB=10V, IC=0

IC=100mA, VCE=2V

IC=100mA, IB=1mA

IC=100mA, IB=1mA

IC=100mA, VCE=2V,

f=100MHz

40

-

30

-

10

-

-

-

-

-

30K

-

-

-

-

1.5

-

220

-

V

-

V

-

V

1

uA

1

uA

-

1

V

2

V

- MHz

VCB=10V, f=1MHz, IE=0

-

5

-

pF

*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%

HBC517

HSMC Product Specification

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