HA-2626 Просмотр технического описания (PDF) - Intersil
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HA-2626 Datasheet PDF : 10 Pages
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Die Characteristics
DIE DIMENSIONS:
69 mils x 56 mils x 19 mils
1750µm x 1420µm x 483µm
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
SUBSTRATE POTENTIAL (POWERED UP):
Unbiased
Metallization Mask Layout
HA-2620, HA-2625
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
TRANSISTOR COUNT:
140
PROCESS:
Bipolar Dielectric Isolation
HA-2620, HA-2625
COMP
V+
BAL
OUT
-IN
+IN
V-
BAL
7
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