H2N7002KSN Просмотр технического описания (PDF) - Hi-Sincerity Mocroelectronics
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H2N7002KSN Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200809
Issued Date : 2008.11.18
Revised Date :2010.04.14
Page No. : 2/4
1.4
VGS=10V
VGS=7V VGS=6V
1.2
1
VGS=5V
0.8
VGS=4V
0.6
0.4
VGS=3V
0.2
0
0
1
2
3
4
5
VDS-Drain-to-Source Voltage(V) Output
Characteristics
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Tj=25℃
Tj=75
Tj=125℃
1
2
3
4
VGS- Gate-to-Source Voltage(v) Transfer
Characteristics
4
3.5
3
VGS=4.5V at 200mA
2.5
2
VGS=10V at 500mA
1.5
1
0.5
0
25 50 75 100 125 150
TJ-Junction Temperature(℃) On-
Resistance VS.Junction Temperature
1.6
1.4
1.2
ID=250uA
1
0.8
0.6
0.4
0.2
0
25
50
75 100 125 150
TJ-Junction Temperature(℃) Threshold
Voltage Variance Over Temperature
3
2.5
2
ID=500mA
1.5
ID=200mA
1
0.5
0
0
2
4
6
8
10
VGS-Gate-to-Source Voltage(v) On-
Resistance vs.Gate-Source Voltage
H2N7002KSN
10
1
0.1
1
Safe Operating Area
PT=1ms
PT=100ms
PT=10ms
10
100
Forward Biased Voltage-VCE (V)
1000
HSMC Product Specification
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