H11AV1 Просмотр технического описания (PDF) - Fairchild Semiconductor
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H11AV1 Datasheet PDF : 7 Pages
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H11AV1,A H11AV2,A
PACKAGE DIMENSIONS
–A–
6
4
–B–
1
3
F 4 PL
N
C
L
–T–
SEATING
PLANE
E 6 PL
K
G
M
D 6 PL
0.13 (0.005) M T A M B M
J 6 PL
0.13 (0.005) M T B M A M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEAD WHEN
FORMED PARALLEL.
INCHES
MILLIMETERS
DIM MIN MAX MIN MAX
A 0.320 0.350 8.13 8.89
B 0.240 0.260 6.10 6.60
C 0.115 0.200 2.93 5.08
D 0.016 0.020 0.41 0.50
E 0.040 0.070 1.02 1.77
F 0.010 0.014 0.25 0.36
G 0.100 BSC
2.54 BSC
J 0.008 0.012 0.21 0.30
K 0.100 0.150 2.54 3.81
L
0.300 BSC
7.62 BSC
M 0_ 15_ 0 _ 15_
N 0.015 0.100 0.38 2.54
STYLE 1:
PIN 1.
2.
3.
4.
5.
6.
ANODE
CATHODE
NC
EMITTER
COLLECTOR
BASE
THRU HOLE
–A–
6
4
–B– S
1
3
F 4 PL
E 6 PL
L
H
C
–T–
G
J
SEATING
K 6 PL
PLANE
D 6 PL
0.13 (0.005) M T B M A M
0.13 (0.005) M T A M B M
SURFACE MOUNT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
DIM MIN MAX
A 0.320 0.350
B 0.240 0.260
C 0.115 0.200
D 0.016 0.020
E 0.040 0.070
F 0.010 0.014
G 0.100 BSC
H 0.020 0.025
J 0.008 0.012
K 0.006 0.035
L 0.320 BSC
S 0.332 0.390
MILLIMETERS
MIN MAX
8.13 8.89
6.10 6.60
2.93 5.08
0.41 0.50
1.02 1.77
0.25 0.36
2.54 BSC
0.51 0.63
0.20 0.30
0.16 0.88
8.13 BSC
8.43 9.90
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