GS8160V36AT-200 Просмотр технического описания (PDF) - Giga Semiconductor

Номер в каталоге

Компоненты Описание

производитель

GS8160V36AT-200

1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

Giga Semiconductor 

TQFP Pin Description

Symbol

Type

A0, A1

I

A

I

DQA

DQB

DQC

I/O

DQD

BW

I

BA, BB, BC, BD

I

CK

I

GW

I

E1, E3

I

E2

I

G

I

ADV

I

ADSP, ADSC

I

ZZ

I

FT

I

LBO

I

VDD

I

VSS

I

VDDQ

I

NC

—

Preliminary

GS8160V18/32/36AT-350/333/300/250/200/150

Description

Address field LSBs and Address Counter preset Inputs

Address Inputs

Data Input and Output pins

Byte Write—Writes all enabled bytes; active low

Byte Write Enable for DQA, DQB Data I/Os; active low

Clock Input Signal; active high

Global Write Enable—Writes all bytes; active low

Chip Enable; active low

Chip Enable; active high

Output Enable; active low

Burst address counter advance enable; active low

Address Strobe (Processor, Cache Controller); active low

Sleep Mode control; active high

Flow Through or Pipeline mode; active low

Linear Burst Order mode; active low

Core power supply

I/O and Core Ground

Output driver power supply

No Connect

Rev: 1.00a 6/2003

5/24

© 2003, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

Share Link: