FX605 Просмотр технического описания (PDF) - SANYO -> Panasonic
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FX605 Datasheet PDF : 4 Pages
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Ordering number:EN4888
FX605
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
· Composite type composed of two low ON-resistance
P-channel MOSFET chips for ultrahigh-speed
switching and low-voltage drive.
· Facilitates high-density mounting.
· The FX605 is formed with two chips, each being
equivalent to the 2SJ190, placed in one package.
· Matched pair characteristics.
Package Dimensions
unit:mm
2120
[FX605]
Switching Time Test CIrcuit
Electrical Connection
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
(Top view)
1:Gate1
2:Source1
3:Source2
4:Gate2
5:Drain2
6:Drain1
SANYO:XP6
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PD
PT
Tch
Tstg
· Marking:605
Conditions
PW≤10µs, duty cycle≤1%
Tc=25˚C, 1unit
Mounted on ceramic board (750mm2×0.8mm) 1unit
Mounted on ceramic board (750mm2×0.8mm)
Ratings
Unit
–60 V
±15 V
–1 A
–4 A
6W
1.5 W
2W
150 ˚C
–55 to +150 ˚C
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095MO(KOTO) TA-0111 No.4888-1/4
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