FS10ASJ-06F-T13 Просмотр технического описания (PDF) - Renesas Electronics

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FS10ASJ-06F-T13

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS10ASJ-06F

Electrical Characteristics

Parameter

Drain-source breakdown voltage

Gate-source breakdown voltage

Drain-source leakage current

Gate-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Reverse recovery time

Symbol

V(BR)DSS

V(BR)GSS

IDSS

IGSS

VGS(th)

rDS(ON)

rDS(ON)

VDS(ON)

| yfs |

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

Rth(ch-c)

trr

Min.

60

±20

—

—

1.0

—

—

—

—

—

—

—

—

—

—

—

—

—

—

Typ.

—

—

—

—

1.5

53

66

0.27

13

750

130

80

7

18

70

35

1.0

—

30

Max.

—

—

100

±10

2.0

70

86

0.35

—

—

—

—

—

—

—

—

1.5

6.25

—

Unit

V

V

µA

µA

V

mΩ

mΩ

V

S

pF

pF

pF

ns

ns

ns

ns

V

°C/W

ns

(Tch = 25°C)

Test conditions

ID = 1 mA, VGS = 0 V

IG = ±100 µA, VDS = 0 V

VDS = 60 V, VGS = 0 V

VGS = ±20 V, VDS = 0 V

ID = 1 mA, VDS = 10 V

ID = 5 A, VGS = 10 V

ID = 5 A, VGS = 4 V

ID = 5 A, VGS = 10 V

ID = 5 A, VDS = 10 V

VDS = 10 V, VGS = 0 V,

f = 1MHz

VDD = 30 V, ID = 5 A,

VGS = 10 V,

RGEN = RGS = 50 Ω

IS = 5 A, VGS = 0 V

Channel to case

IS = 10 A, dis/dt = –100 A/µs

Rev.1.00, Aug.20.2004, page 2 of 6

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