FM1608B-SG Просмотр технического описания (PDF) - Ramtron International Corporation

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FM1608B-SG

64Kb Bytewide 5V F-RAM Memory

Ramtron International Corporation 

FM1608B – 64Kb Bytewide 5V F-RAM

Write Cycle Timing - /WE Controlled Timing

CE

tWC

tCA

tPC

tC W

tAH

tAS

A(12:0)

WE

tWS

tWH

tWP

OE

DQ(7:0)

out

DQ(7:0)

in

tWZ

tDS

tWX

tDH

Power Cycle Timing

VDD

CE

VDD (min)

t PD

t PC

VIH (min)

VIH (min)

VDD (min)

t PU

VIL (max)

Power Cycle Timing (TA = -40° C to + 85° C, VDD = 4.5V to 5.5V unless otherwise specified)

Symbol Parameter

Min

Max Units

tPU

VDD(min) to First Access Start

tPD

Last Access Complete to VDD(min)

10

-

ms

0

-

µs

tVR

VDD Rise Time

tVF

VDD Fall Time

30

-

µs/V

100

-

µs/V

Notes

1 Slope measured at any point on VDD waveform.

Notes

1

1

Rev. 1.2

Mar. 2011

Page 9 of 11

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