RMWT04001 Просмотр технического описания (PDF) - Raytheon Company
Номер в каталоге
Компоненты Описание
Список матч
RMWT04001 Datasheet PDF : 5 Pages
| |||
RMWT04001
4-12 GHz Tripler MMIC
Figure 1
Functional Block
Diagram
Figure 2
Chip Layout and Bond
Pad Locations
Dimensions in mm
0.0
1.05
Chip Size is 1.8 mm x
1.05 mm x100 µm. Back
of chip is RF ground
0.592
0.448
RF IN
MMIC Chip
X3
Ground
(Back of Chip)
PRODUCT INFORMATION
RF OUT
1.8
1.05
0.592
0.448
Figure 3
Recommended
Assembly Diagram
0.0
0.0
5mil Thick
Alumina
50-Ohm
Die-Attach
80Au/20Sn
0.0
1.8
5 mil Thick
Alumina
50-Ohm
RF
Input
RF
Output
2 mil Gap
L< 0.015”
(2 Places)
Note:
Use 0.003” by 0.0005” Gold Ribbon for bonding. RF input and output bonds should be less than 0.015” long with stress relief.
Recommended
Procedure
for Operation
www.raytheon.com/micro
The following sequence must be followed to properly test the amplifier.
Step 1: The RMWT04001 does not require DC bias.
Apply RF input signal at the appropriate
frequency band and input drive level.
Step 2: Follow turn-off sequence of:
Turn off RF input power.
Characteristic performance data and specifications are subject to change without notice.
Revised March 14, 2001
Page 2
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
Share Link: 