HM514100DS-8 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

HM514100DS-8

4,194,304-word × 1-bit Dynamic RAM

Hitachi -> Renesas Electronics 

HM514100D Series

DC Characteristics (Ta = 0 to +70°C, VCC = 5 V ± 10%, VSS = 0 V)

HM514100D

-6

-7

-8

Parameter

Symbol Min Max Min Max Min Max Unit Test conditions

Notes

Operating current

I CC1

— 110 — 100 — 90 mA RAS, CAS cycling

1, 2

tRC = min

Standby current

I CC2

— 2 — 2 — 2 mA TTL interface

RAS, CAS = VIH

Dout = High-Z

—1

—1

—1

mA CMOS interface

RAS, CAS ≥ VCC – 0.2 V

Dout = High-Z

Standby current

I CC2

— 100 — 100 — 100 µA CMOS interface

4

(L-version)

RAS, CAS = VIH

WE, Address and

Din = VIH or VIL

Dout = High-Z

RAS-only

I CC3

— 110 — 100 — 90 mA tRC = min

2

refreshcurrent

Standby current

I CC5

— 5 — 5 — 5 mA RAS = VIH,

1

CAS = VIL

Dout = enable

CAS-before-RAS

I CC6

refresh current

— 110 — 100 — 90 mA tRC = min

Fast page mode

I CC7

— 110 — 100 — 90 mA tPC = min

1, 3

current

Battery backup

I CC10

— 200 — 200 — 200 µA tRC = 125 µs

4

current (Standby with

tRAS ≤ 1 µs

CBR refresh) (L-

WE = VIH, CAS = VIL

version)

OE Address,

Din = VIH or VIL

Dout = High-Z

Input leakage current ILI

Output leakage

I LO

current

–10 10

–10 10

–10 10

–10 10

–10 10

–10 10

µA 0 V ≤ Vin ≤ 7 V

µA 0 V ≤ Vout ≤ 7 V

Dout = disable

Output high voltage VOH

2.4 VCC 2.4 VCC 2.4 VCC V High Iout = –5 mA

Output low voltage VOL

0 0.4 0 0.4 0 0.4 V Low Iout = 4.2 mA

Notes: 1. ICC depends on output load condition when the device is selected. ICC max is specified at the output

open condition.

2. Address can be changed twice or less while RAS = VIL.

3. Address can be changed once or less while CAS = VIH.

4. VCC – 0.2 V ≤ VIH ≤ 6.5 V and 0 V ≤ VIL ≤ 0.2 V.

6

Share Link: