FGA15N120AND Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
FGA15N120AND Datasheet PDF : 8 Pages
| |||
2500
2000
Ciss
1500
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
1000
500
Coss
Crss
0
1
10
Collector-Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 600V, V = ± 15V
CC
GE
I = 15A
C
T = 25℃
C
T = 125℃
C
100
td(off)
tf
10
0
10
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
T = 25℃
C
T = 125℃
C
100
td(on)
tr
5
10
15
20
25
30
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2003 Fairchild Semiconductor Corporation
100
td(on)
tr
10
0
Common Emitter
V = 600V, V = ± 15V
CC
GE
I = 15A
C
T = 25℃
C
T = 125℃
C
10
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Fig 8. Turn-On Characteristics vs. Gate
Resistance
Common Emitter
V = 600V, V = ± 15V
10
CC
I = 15A
GE
C
T = 25℃
C
T = 125℃
C
1
Eon
Eoff
0
10
20
30
40
50
60
70
Gate Resistance, RG [Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V =±
GE
15V,
R
G
=
20Ω
T = 25℃
C
T = 125℃
C
100
td(off)
tf
5
10
15
20
25
30
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FGA15N120AND Rev. A
Share Link: 