FDR6678A Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDR6678A Datasheet PDF : 8 Pages
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April 2000
PRELIMINARY
FDR6678A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“high side” synchronous rectifier operation, providing an
extremely low RDS(ON) and fast switching in a small
package.
Applications
• DC/DC converter
Features
• 7.5 A, 30 V.
RDS(ON) = 24 mΩ @ VGS = 4.5V
RDS(ON) = 20 mΩ @ VGS = 10 V
• High performance trench technology for extremely
low RDS(ON)
• Fast switching, low gate charge
• High power and current in a smaller footprint than
SO-8
S
D
D
S
G
D
SuperSOTTM -8
D
D
5
4
6
3
7
2
8
1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.6678A
FDR6678A
13’’
Ratings
30
±12
7.5
40
1.8
1.0
0.9
-55 to +150
70
20
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
2000 Fairchild Semiconductor Corporation
FDR6678A Rev B(W)
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