FDP047N08 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDP047N08 Datasheet PDF : 8 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.15
Figure 8. On-Resistance Variation vs.
Temperature
2.5
1.10
1.05
1.00
0.95
0.90
-100
*Notes:
1. VGS = 0V
2. ID = 10mA
-50 0
50 100 150 200
TJ, Junction Temperature [oC]
2.0
1.5
1.0
0.5
-100
*Notes:
1. VGS = 10V
2. ID = 80A
-50 0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
1000
30µs
100
Operation in This Area
10 is Limited by R DS(on)
100µs
1ms
10ms
DC
1
0.1
1
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
10
100
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
180
150
120
90
60
Limited by package
30
0
25 50 75 100 125 150 175
TC, Case Temperature [oC]
Figure 11. Transient Thermal Response Curve
2
1
0.5
0.1 0.2
0.1
0.05
0.02
0.01 0.01
Single pulse
1E-3
10-5
10-4
PDM
t1
t2
*Notes:
1. ZθJC(t) = 0.56oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
10-1
1
10
Rectangular Pulse Duration [sec]
FDP047N08 Rev. A
4
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