FDB13AN06A0NL Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

FDB13AN06A0NL

N-Channel PowerTrench® MOSFET 60V, 62A, 13.5mΩ

Fairchild Semiconductor 

Typical Characteristics TC = 25°C unless otherwise noted

1.4

1.2

VGS = VDS, ID = 250µA

ID = 250µA

1.2

1.1

1.0

0.8

1.0

0.6

0.4

-80 -40

0

40

80

120 160 200

TJ, JUNCTION TEMPERATURE (oC)

Figure 11. Normalized Gate Threshold Voltage vs

Junction Temperature

0.9

-80

-40

0

40

80 120 160 200

TJ, JUNCTION TEMPERATURE (oC)

Figure 12. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

3000

1000

COSS ≅ CDS + CGD

CISS = CGS + CGD

10

VDD = 30V

8

6

CRSS = CGD

100

VGS = 0V, f = 1MHz

40

0.1

1

10

60

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 13. Capacitance vs Drain to Source

Voltage

4

WAVEFORMS IN

2

DESCENDING ORDER:

ID = 62A

ID = 31A

0

0

5

10

15

20

25

Qg, GATE CHARGE (nC)

Figure 14. Gate Charge Waveforms for Constant

Gate Current

©2003 Fairchild Semiconductor Corporation

FDB13AN06A0 / FDP13AN06A0 Rev. A1

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