FDB13AN06A0 Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
FDB13AN06A0 Datasheet PDF : 11 Pages
| |||
Typical Characteristics TC = 25°C unless otherwise noted
1000
100
10µs
100µs
10 OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
1ms
1
SINGLE PULSE
TJ = MAX RATED
DC
TC = 25oC
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100
Figure 5. Forward Bias Safe Operating Area
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
STARTING TJ = 25oC
10
STARTING TJ = 150oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
80 VDD = 15V
60
40
TJ = 175oC
TJ = 25oC
TJ = -55oC
20
0
3
4
5
6
7
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25
VGS = 6V
20
100
TC = 25oC
80
VGS = 20V
VGS = 10V
60
VGS = 6V
40
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
20
VGS = 5V
0
0
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
15
VGS = 10V
10
0
10
20
30
40
50
60
70
ID, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
1.0
0.5
-80
VGS = 10V, ID =62A
-40
0
40
80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2003 Fairchild Semiconductor Corporation
FDB13AN06A0 / FDP13AN06A0 Rev. A1
Share Link: 