FDP13AN06A0 Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FDP13AN06A0 Datasheet PDF : 11 Pages
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Package Marking and Ordering Information
Device Marking
FDB13AN06A0
FDP13AN06A0
Device
FDB13AN06A0
FDP13AN06A0
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50 units
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250µA, VGS = 0V
VDS = 50V
VGS = 0V
TC = 150oC
VGS = ±20V
On Characteristics
VGS(TH)
Gate to Source Threshold Voltage
rDS(ON)
Drain to Source On Resistance
VGS = VDS, ID = 250µA
ID = 62A, VGS = 10V
ID = 31A, VGS = 6V
ID = 62A, VGS = 10V,
TJ = 175oC
Dynamic Characteristics
CISS
COSS
CRSS
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V,
f = 1MHz
VGS = 0V to 10V
VGS = 0V to 2V
VDD = 30V
ID = 62A
Ig = 1.0mA
Switching Characteristics (VGS = 10V)
tON
td(ON)
Turn-On Time
Turn-On Delay Time
tr
td(OFF)
Rise Time
Turn-Off Delay Time
tf
tOFF
Fall Time
Turn-Off Time
VDD = 30V, ID = 62A
VGS = 10V, RGS = 12Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovered Charge
Notes:
1: Starting TJ = 25°C, L = 45µH, IAS = 50A.
2: Pulse width = 100s.
ISD = 62A
ISD = 31A
ISD = 62A, dISD/dt = 100A/µs
ISD = 62A, dISD/dt = 100A/µs
Min Typ Max Units
60
-
-
V
-
-
1
µA
-
-
250
-
-
±100 nA
2
-
4
V
- 0.0115 0.0135
-
0.022 0.034
Ω
- 0.026 0.030
-
1350
-
pF
-
260
-
pF
-
90
-
pF
22
29
nC
-
2.6
3.4
nC
-
8.5
-
nC
-
5.9
-
nC
-
6.4
-
nC
-
-
158
ns
-
9
-
ns
-
96
-
ns
-
24
-
ns
-
26
-
ns
-
-
74
ns
-
-
1.25
V
-
-
1.0
V
-
-
25
ns
-
-
17
nC
©2003 Fairchild Semiconductor Corporation
FDB13AN06A0 / FDP13AN06A0 Rev. A1
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