FDU6696 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDU6696 Datasheet PDF : 5 Pages
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Typical Characteristics
100
VGS =10V
80 6.0V
4.5V
5.0V
4.0V
60
3.5V
40
20
0
0
3.0V
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
1.8
ID = 50A
1.6 VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE ( oC)
Figure 3. On-Resistance Variation with
Temperature
60
VDS = 5V
40
20
TA =125oC
25oC
-55oC
0
2
2.5
3
3.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
2.4
2.2
2
VGS = 3.5V
1.8
1.6
1.4
1.2
1
0.8
0
20
4.0V
4.5V
5.0V
6.0V
10V
40
60
80
100
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.022
0.018
ID = 25A
0.014
0.01
0.006
o
TA = 25 C
TA = 125 oC
0.002
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6696/FDU6696 Rev. D (W)
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