FDU6688 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDU6688 Datasheet PDF : 6 Pages
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Typical Characteristics
10
ID =18A
8
VDS = 10V
15V
20V
6
4
2
0
0
20
40
60
80
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
1000
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1
RθJA = 96oC/W
TC = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
5000
4000
3000
CISS
f = 1MHz
VGS = 0 V
2000
COSS
1000
CRSS
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics
100
80
60
40
20
0
0.01
0.1
SINGLE PULSE
RθJA = 96°C/W
TC = 25°C
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
SINGLE PULSE
0.0001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJAt) = r(t) * RθJA
RθJA = 96 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6688/FDU6688 Rev F(W)
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