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BM29F400T

4 MEGABIT (512K x8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY

Winbond 

BRIGHT

Microelectronics

Inc.

Preliminary BM29F040

FEATURES

• 5.0 V +/- 10% Program and Erase

− Minimizes system power consumption

− Simplifies the system design

• Compatible with JEDEC standard commands

− Uses same software commands as

EEPROMs

• Compatible with JEDEC-standard byte wide

pinout

− 32 pin PLCC/TSOP

− 32 pin DIP

• Automated sector/chip Erase Algorithms

− No programming before Erase needed

− Internal program and Erase Margin Check

• Data Polling and Toggle Bit

− useful for detection of Program and Erase

cycle completion

• Sector Erase architecture

− 8 Equal sectors of 64K bytes each

− Any combination of multiple Sector Erase

− Full Chip Erase

• Sector Protection

− Any number of sectors can be protected from

Program and Erase operation

• Low Power Consumption

• Typically 100,000 Program/Erase cycles

• Erase Suspend and Resume

− Suspend the Sector Erase Operation to

allow a READ in another sector

• Low Vcc Write inhibit < 3.2 volts

• Single Cycle reset command

Product Selection Guide

FAMILY PART NO:

Maximum Access Time (nS)

CE (E) Access time (nS)

OE (G) Access time (nS)

-75*

-90

70

90

70

90

30

35

Table 1

*This speed is available with Vcc = 5V +/- 5% variation

-120

-150

120

150

120

150

50

60

-2-

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