29F040-12NI Просмотр технического описания (PDF) - Winbond

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29F040-12NI

4 MEGABIT (512K x8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY

Winbond 

BRIGHT

Microelectronics

Inc.

Switching Waveforms

Preliminary BM29F040

Vih

Addresses (A)

Vil

Vih

CE (E)

Vil

Vih

OE (G)

Vil

Vih

WE (W)

Vil

Vih

DATA (D/Q)

Vil

HIGH Z

5555H

t WC

t GHWL

PA

t AH

t AS

t WPH

tCS

tWP

t DS

t DH

A0H

PD

5.0 V

VCC

GND

Data Polling

PA

t WHWH1

DQ7

DOUT

t RC

t DF

t OH

t OE

t CE

Figure 9. A.C.Waveforms for Program Operations ( WE Controlled Writes)

Notes:

1. PA is the address of the memory location to be programmed.

2. PD is the data to be programmed at the byte address.

3. DQ7 is the output of the complement of the data written tot he device.

4. DOUT is the output of the data written to the device.

5. Figure indicates the last two bus cycles of four bus cycle sequence.

A Winbond Company

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Publication Release Date: May 1999

Revision A1

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