BM29F040 Просмотр технического описания (PDF) - Winbond

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BM29F040

4 MEGABIT (512K x8) 5 VOLT SECTOR ERASE CMOS FLASH MEMORY

Winbond 

BRIGHT

Microelectronics

Inc.

Maximum Overshoot

Maximum Negative Overshoot

Preliminary BM29F040

+0.8 V

-0.5 V

20 nS

20 nS

20 nS

-2.0 V

Maximum Negative Overshoot Waveform

Vcc + 2.0 V

Vcc + 0.5 V

2.0 V

20 nS

20 nS

20 nS

Maximum positive Overshoot Waveform

Figure 6. Maximum Overshoot Waveforms

DC Characteristics

Symbo

l

Parameter

Min

Max Unit

Test Conditions

Vil

Input Low Level

-0.5

0.8

V

Vih

Input High Level

2.0

Vcc + 0.5

V

Vol

Output Low Voltage

0.45

V lol = 12mA Vcc = Vcc Min.

Voh Output High Voltage

2.4

V loh = -2.5mA Vcc = Vcc Min.

Voh 2 Output High Voltage

Vcc - 0.4

V lohl = -100uA Vcc = Vcc Min.

lli

Input Load Current

+/- 1.0

uA Vin = Vcc or GND Vcc = Vcc Max.

llo

Output Leakage Current

+/- 10

uA Vout = Vcc or GND Vcc = Vcc

Max.

los

Output Short Circuit Current

100

mA Vout = 0.5V Vcc = Vcc Max.

lsb1

Vcc Standby Current (CMOS) 4

100

uA CE = Vcc +/- 0.5V Vcc = Vcc Max.

lsb2

Vcc Standby Current (TTL) 4

1.0

mA CE = Vih Vcc = Vcc Max.

lcc1

Vcc Active Current Read 1,3

40

mA CE = Vil, f = 6MHz, OE = Vih

lcc2

Vcc Active Current Program or 2

60

mA CE = Vil, OE = Vih

Vid

A9 Intelligent Identifier Volatge

11.5

12.5

V

lid

A9 Intelligent Identifier Current

50

uA A9 = Vid

Table 9

Notes:

1. All Currents are in RMS unless otherwise noted. Typical values are Vcc = +5.0V, T = 25° C.

2. These parameters are sampled but not 100% tested.

3. Automatic power saving reduces the Iccr to 1 mA.

4. CMOS inputs are Vcc +0.5V. TTL inputs are either VIL or VIH.

A Winbond Company

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Publication Release Date: May 1999

Revision A1

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