EP7311 Просмотр технического описания (PDF) - Cirrus Logic
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EP7311 Datasheet PDF : 54 Pages
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EP7311
High-Performance, Low-Power System on Chip
ELECTRICAL SPECIFICATIONS
Absolute Maximum Ratings
DC Core, PLL, and RTC Supply Voltage
DC I/O Supply Voltage (Pad Ring)
DC Pad Input Current
Storage Temperature, No Power
Recommended Operating Conditions
2.9 V
3.6 V
±10 mA/pin; ±100 mA cumulative
–40°C to +125°C
DC core, PLL, and RTC Supply Voltage
DC I/O Supply Voltage (Pad Ring)
DC Input / Output Voltage
Operating Temperature
2.5 V ± 0.2 V
2.3 V - 3.5 V
O–I/O supply voltage
Extended -20°C to +70°C; Commercial 0°C to +70°C;
Industrial -40°C to +85°C
DC Characteristics
All characteristics are specified at VDDCORE = 2.5 V, VDDIO = 3.3 V and VSS = 0 V over an operating temperature of 0°C
to +70°C for all frequencies of operation. The current consumption figures have test conditions specified per
parameter.”
Symbol
Parameter
Min
Typ
Max
Unit
Conditions
VIH
CMOS input high voltage
0.65 × VDDIO
-
VDDIO + 0.3
V
VDDIO = 2.5 V
VIL
CMOS input low voltage
VSS − 0.3
-
0.25 × VDDIO
V
VDDIO = 2.5 V
VT+
Schmitt trigger positive going
threshold
-
-
2.1
V
VT-
Schmitt trigger negative going
threshold
0.8
-
-
V
Vhst
Schmitt trigger hysteresis
0.1
-
0.4
V
VIL to VIH
CMOS output high voltagea
VDD – 0.2
-
-
V
IOH = 0.1 mA
VOH
Output drive 1a
2.5
-
-
V
IOH = 4 mA
Output drive 2a
2.5
-
-
V
IOH = 12 mA
CMOS output low voltagea
-
-
0.3
V
IOL = –0.1 mA
VOL
Output drive 1a
-
-
0.5
V
IOL = –4 mA
Output drive 2a
-
-
0.5
V
IOL = –12 mA
IIN
Input leakage current
-
-
1.0
µA
VIN = VDD or GND
Bidirectional 3-state leakage
IOZ
currentb c
25
-
100
µA
VOUT = VDD or GND
CIN
Input capacitance
8
-
10.0
pF
10
©Copyright Cirrus Logic, Inc. 2003
(All Rights Reserved)
DS506PP1
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