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EN25B64 Просмотр технического описания (PDF) - Eon Silicon Solution Inc.

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EN25B64 Datasheet PDF : 37 Pages
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EN25B64
EN25B64
64 Megabit Serial Flash Memory with Boot and Parameter Sectors
FEATURES
Single power supply operation
- Full voltage range: 2.7-3.6 volt
64 M-bit Serial Flash
- 64 M-bit/8192 K-byte/32768 pages
- 256 bytes per programmable page
High performance
- 100MHz clock rate
Low power consumption
- 5 mA typical active current
- 1 μA typical power down current
Flexible Sector Architecture:
- Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one
32-Kbyte, and one hundred twenty-seven 64-
Kbyte sectors
Software and Hardware Write Protection:
- Write Protect all or portion of memory via
software
- Enable/Disable protection with WP# pin
High performance program/erase speed
- Byte program time: 7µs typical
- Page program time: 1.5ms typical
- Sector erase time: 300 to 800ms typical
- Chip erase time: 50 Seconds typical
Lockable 512byte OTP security sector
Minimum 100K endurance cycle
Package Options
- 16 pins SOP 300mil body width
- All Pb-free packages are RoHS compliant
Industrial temperature Range
GENERAL DESCRIPTION
The EN25B64 is a 64M-bit (8192K-byte) Serial Flash memory, with advanced write protection
mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to
256 bytes at a time, using the Page Program instruction.
The EN25B64 has one hundred twenty-eight sectors including one hundred twenty-seven sectors of
64KB, one sector of 32KB, one sector of 16KB, one sector of 8KB and two sectors of 4KB. This device is
designed to allow either single Sector at a time or full chip erase operation. The EN25B64 can protect
boot code stored in the small sectors for either bottom or top boot configurations. The device can sustain
a minimum of 100K program/erase cycles on each sector.
This Data Sheet may be revised by subsequent versions 1
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2008/06/23

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