EN25B20 Просмотр технического описания (PDF) - Eon Silicon Solution Inc.
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EN25B20 Datasheet PDF : 32 Pages
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EN25B20
MEMORY ORGANIZATION
The memory is organized as:
z 262,144 bytes
z Flexible Sector Architecture
Two 4-Kbyte, one 8-Kbyte, one 16-Kbyte,one 32-Kbyte, and three 64-Kbyte sectors
z Bottom or top boot configurations
z 1024 pages (256 bytes each)
Each page can be individually programmed (bits are programmed from 1 to 0). The device is Sector or
Bulk Erasable but not Page Erasable.
Table 2a. Bottom Boot Block Sector Architecture
Sector
7
6
5
4
3
2
1
0
SECTOR SIZE (KByte)
64
64
64
32
16
8
4
4
Address range
30000h – 3FFFFh
20000h – 2FFFFh
10000h – 1FFFFh
08000h – 0FFFFh
04000h – 07FFFh
02000h – 03FFFh
01000h – 01FFFh
00000h – 00FFFh
Table 2b. Top Boot Block Sector Architecture (Special order)
Sector
7
6
5
4
3
2
1
0
SECTOR SIZE (KByte)
4
4
8
16
32
64
64
64
Address range
3F000h – 3FFFFh
3E000h – 3EFFFh
3C000h – 3DFFFh
38000h – 3BFFFh
30000h – 37FFFh
20000h – 2FFFFh
10000h – 1FFFFh
00000h – 0FFFFh
This Data Sheet may be revised by subsequent versions
4
or modifications due to changes in technical specifications.
©2004 Eon Silicon Solution, Inc., www.essi.com.tw
Rev. C, Issue Date: 2006/12/26
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