EDF1BM-E3/45 Просмотр технического описания (PDF) - Vishay Semiconductors

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EDF1BM-E3/45

Miniature Glass Passivated Ultrafast Bridge Rectifier

Vishay Semiconductors 

www.vishay.com

EDF1AM, EDF1BM, EDF1CM, EDF1DM

Vishay General Semiconductor

30

TJ = 25 °C

25

f = 1.0 MHz

Vsig = 50 mVp-p

20

15

10

5

0

0.1

1

10

100

1000

Reverse Voltage (V)

Fig. 5 - Typical Junction Capacitance Per Diode



PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Case Style DFM

0.255 (6.5) 0.315 (8.00)

0.245 (6.2) 0.285 (7.24)

0.130 (3.30)

0.120 (3.05)

0.045 (1.14)

0.035 (0.89)

0.023 (0.58)

0.018 (0.46)

0.335 (8.51)

0.320 (8.12)

0.205 (5.2)

0.195 (5.0)

0.080 (2.03)

0.050 (1.27)

0.185 (4.69)

0.150 (3.81)

0.075 (1.90)

0.055 (1.39)

0.013 (0.33)

0.0086 (0.22)

0.350 (8.9)

0.300 (7.6)

Revision: 16-Aug-13

3

Document Number: 88577

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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