EDF1BM-E3/45(2008) Просмотр технического описания (PDF) - Vishay Semiconductors
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EDF1BM-E3/45 Datasheet PDF : 4 Pages
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EDF1AM thru EDF1DM
Vishay General Semiconductor
30
TJ = 25 °C
25
f = 1.0 MHz
Vsig = 50 mVp-p
20
15
10
5
0
0.1
1
10
100
1000
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.335 (8.51)
0.320 (8.12)
0.205 (5.2)
0.195 (5.0)
0.080 (2.03)
0.050 (1.27)
0.185 (4.69)
0.150 (3.81)
0.075 (1.90)
0.055 (1.39)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Document Number: 88577 For technical questions within your region, please contact one of the following:
Revision: 14-Jan-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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