EBD11UD8ABFA Просмотр технического описания (PDF) - Elpida Memory, Inc
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EBD11UD8ABFA Datasheet PDF : 18 Pages
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EBD11UD8ABFA
DC Characteristics 1 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
Grade max.
Unit Test condition
Operating current (ACTV-PRE)
Operating current
(ACTV-READ-PRE)
IDD0
IDD1
1560
1760
mA
CKE ≥ VIH,
tRC = tRC (min.)
CKE ≥ VIH, BL = 2,
mA CL = 2.5,
tRC = tRC (min.)
Idle power down standby current IDD2P
48
mA CKE ≤ VIL
Idle standby current
IDD2N
560
mA CKE ≥ VIH, /CS ≥ VIH
Active power down
standby current
Active standby current
Operating current
(Burst read operation)
Operating current
(Burst write operation)
IDD3P
IDD3N
IDD4R
IDD4W
320
960
1920
1920
mA CKE ≤ VIL
mA
CKE ≥ VIH, /CS ≥ VIH
tRAS = tRAS (max.)
mA
CKE ≥ VIH, BL = 2,
CL = 2.5
mA
CKE ≥ VIH, BL = 2,
CL = 2.5
Auto refresh current
Self refresh current
IDD5
IDD6
4320
64
mA
tRFC = tRFC (min.),
Input ≤ VIL or ≥ VIH
mA
Input ≥ VDD – 0.2 V
Input ≤ 0.2 V
Operating current
(4 banks interleaving)
IDD7A
3440
mA BL = 4
Notes. 1. These IDD data are measured under condition that DQ pins are not connected.
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. 4 banks active. Only one bank is running at tRC = tRC (min.)
8. The IDD data on this table are measured with regard to tCK = tCK (min.) in general.
Notes
1, 2, 5
1, 2, 5
4
4, 5
3
3, 5, 6
1, 2, 5, 6
1, 2, 5, 6
5, 6, 7
DC Characteristics 2 (TA = 0 to 70°C, VDD, VDDQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Input leakage current
Output leakage current
Output high current
Output low current
Symbol
ILI
ILO
IOH
IOL
min.
–32
–10
–15.2
15.2
max.
32
10
—
—
Unit
Test condition
µA
VDD ≥ VIN ≥ VSS
µA
VDD ≥ VOUT ≥ VSS
mA
VOUT = 1.95V
mA
VOUT = 0.35V
Notes
Preliminary Data Sheet E0281E10 (Ver. 1.0)
10
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