DS8007-ENG Просмотр технического описания (PDF) - Dallas Semiconductor -> Maxim Integrated

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DS8007-ENG

Multiprotocol Dual Smart Card Interface

Dallas Semiconductor -> Maxim Integrated 

Multiprotocol Dual Smart Card Interface

ELECTRICAL CHARACTERISTICS (continued)

(VDD = +3.3V, VDDA = +3.3V, TA = +25°C, unless otherwise noted.) (Note 1)

PARAMETER

SYMBOL

CONDITIONS

Card

Inactive

Mode

Output Low

Voltage

Output Current

Internal Pullup

Resistor

VOLC48 IOLC48 = 1mA

IOLC48 VOLC48 = 0V

RPULLUP Between C4 or C8 and VCCx

Output Low

Voltage

Output High

Voltage

Output

Rise/Fall Time

VOLC48 IOLC48 = 1mA

VOHC48

IOHC48 ≤ -20µA

IOHC48 ≤ -40µA (3V/5V)

tOT

CL = 30pF

C4x,

C8x

Pins

Card

Active

Mode

Input Low

Voltage

Input High

Voltage

Input Low

Current

VILC48

VIHC48

IILC48 VILIO = 0V

Input High

Current

IIHC48 VIHIO = VCC

Input Rise/Fall

Time

tIT

CL = 30pF

Pullup Pulse

Width

tWPU Active pullup

Operating

Frequency

TIMING

Activation Sequence Duration

Deactivation Sequence Duration

PRESA/PRESB PINS

Input Low Voltage

Input High Voltage

Input Low Current

Input High Current

I/OAUX PIN

Internal Pullup Resistor

Output Low Voltage

Output High Voltage

Output Rise/Fall Time

fMAX On card contact pins

tACT

tDE

See Figure 9

See Figure 9

VILPRES

VIHPRES

IILPRES

IIHPRES

VILPRES = 0V

VIHPRES = VDD

RPULLUP

VOLAUX

VOHAUX

tOT

Between I/OAUX and VDD

IOLAUX = 1mA

IOHAUX = 40µA (3V/5V)

CL = 30pF

MIN TYP MAX UNITS

0

0.3

V

0

-1

mA

6

10

14

kΩ

0

0.8 x VCC

0.75 x VCC

0.3

V

VCC

VCC

0.1

µs

-0.3

+0.8

V

1.5

VCC

850

µA

20

1.2

µs

200

ns

1

MHz

130

µs

150

µs

0.7 x VDD

0.25 x VDD V

V

40

µA

40

µA

9

14

19

kΩ

0.3

V

0.75 x VDD

VDD

V

0.1

µs

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