DS2252T(2000) Просмотр технического описания (PDF) - Dallas Semiconductor -> Maxim Integrated
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DS2252T Datasheet PDF : 15 Pages
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ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Voltage on VCC Relative to Ground
Operating Temperature2
Storage Temperature
Soldering Temperature
-0.3V to (VCC + 0.5V)
-0.3V to +6.0V
-40°C to +85°C
-55°C to +125°C
260°C for 10 seconds
DS2252T
1 This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
2 Storage temperature is defined as the temperature of the device when VCC=0V and VLI=0V. In this
state the contents of SRAM are not battery-backed and are undefined.
DC CHARACTERISTICS
PARAMETER
Input Low Voltage
Input High Voltage
Input High Voltage (RST, XTAL1, PROG )
Output Low Voltage
@ IOL=1.6 mA (Ports 1, 2, 3)
Output Low Voltage
@ IOL=3.2 mA (Ports 0, ALE)
Output High Voltage
@ IOH= -80 µA (Ports 1, 2, 3)
Output High Voltage
@ IOH=-400 µA (Ports 0, ALE)
Input Low Current VIN = 0.45V
(Ports 1, 2, 3)
Transition Current; 1 to 0
VIN = 2.0V (Ports 1, 2, 3)
Input Leakage Current
0.45 < VIN < VCC (Port 0)
RST Pulldown Resistor
Power Fail Warning Voltage
Minimum Operating Voltage
Operating Current @ 16 MHz
Idle Mode Current @ 12 MHz
Stop Mode Current
Pin Capacitance
SYMBOL
VIL
VIH1
VIH2
VOL1
VOL2
VOH1
VOH2
IIL
ITL
IIL
RRE
VPRW
VCCMIN
ICC
IIDLE
ISTOP
CIN
(tA=0°C to 70°C; VCC=5V ± 10%)
MIN TYP MAX UNITS NOTES
-0.3
+0.8
V
1
2.0
VCC+0.3 V
1
3.5
VCC+0.3 V
1
0.15 0.45
V
1
0.15 0.45
V
1
2.4 4.8
V
1
2.4 4.8
V
1
-50
µA
-500
µA
±10
µA
40
150
kΩ
4.25 4.37 4.50
V
1
4.00 4.12 4.25
V
1
45
mA
4
7.0
mA
5
80
µA
6
10
pF
7
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