DF2S5.6S Просмотр технического описания (PDF) - Toshiba
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DF2S5.6S Datasheet PDF : 3 Pages
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TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
DF2S5.6S
DF2S5.6S
Product for Use Only as Protection against Electrostatic
Discharge (ESD).
Unit: mm
* This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
z 2terminal ultra small package suitable for mounting on small space.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Power dissipation
Junction temperature
Storage temperature range
P
150*
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
⎯
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
JEITA
TOSHIBA
⎯
1-1K1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 0.0001 g (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm.
Electrical Characteristics (Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Total capacitance
Symbol
VZ
ZZ
IR
CT
Test Condition
IZ = 5 mA
IZ = 5 mA
VR = 3.5 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
5.3 5.6 6.0
V
―
―
30
Ω
―
―
1
μA
―
40
―
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(contact discharge)
ESD Immunity Level
±30 kV
Criterion: No damage to device elements
Marking
6.
Equivalent Circuit (Top View)
1
2007-11-01
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