DDTC115GE-7-F(2018) Просмотр технического описания (PDF) - Diodes Incorporated.

Номер в каталоге

Компоненты Описание

Список матч

DDTC115GE-7-F
(Rev.:2018)

NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR

Diodes Incorporated. 

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

IC (Max)

DDTC (R2-ONLY SERIES) E

Value

Unit

50

V

50

V

5

V

100

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Power Dissipation

Thermal Resistance, Junction to Ambient Air (Note 5)

Operating and Storage Temperature Range

Symbol

PD

RJA

TJ, TSTG

Value

150

833

-55 to +150

Unit

mW

°C/W

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Symbol Min

Typ

Max

BVCBO

50





BVCEO

50





Emitter-Base Breakdown Voltage

BVEBO

5





Collector Cutoff Current

Emitter Cutoff Current

DDTC114GE

DDTC124GE

DDTC144GE

DDTC115GE

ICBO





0.5

300

580

IEBO

140

65



260

130

30

58

Collector-Emitter Saturation Voltage

VCE(SAT)





0.3

DDTC114GE

30

DC Current Transfer Ratio

DDTC124GE

DDTC144GE

hFE

56

68





DDTC115GE

82

Bleeder Resistor (R2) Tolerance

R2

-30



+30

Gain-Bandwidth Product (Note 6)

fT



250



Notes:

5. Mounted on FR-4 PC Board with minimum recommended pad layout.

6. Transistor only.

Unit

Test Condition

V

IC = 50µA

V

IC = 1mA

IE = 720µA, DDTC114GE

V

IE = 330µA, DDTC124GE

IE = 160µA, DDTC144GE

IE = 72µA, DDTC115GE

µA

VCB = 50V

µA

VEB = 4V

V

IC = 10mA, IB = 0.5mA



IC = 5mA, VCE = 5V

%

MHz



VCE = 10V, IE = -5mA, f = 100MHz

DDTC (R2-ONLY SERIES) E

Document number: DS30316 Rev. 9 - 2

2 of 5

www.diodes.com

May 2018

© Diodes Incorporated

Share Link: