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DCR720E16 Просмотр технического описания (PDF) - Dynex Semiconductor

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Компоненты Описание
Список матч
DCR720E16
Dynex
Dynex Semiconductor Dynex
DCR720E16 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Double Side Cooled
IT(AV) Mean on-state current
IT(RMS) RMS value
IT
Continuous (direct) on-state current
Test Conditions
Half wave resistive load
-
-
DCR720E
Max. Units
720
A
1220
A
1100
A
SURGE RATINGS
Symbol
Parameter
ITSM
Surge (non-repetitive) on-state current
I2t
I2t for fusing
Test Conditions
10ms half sine, Tcase = 125°C
VR = 0
Max.
8.3
0.344
Units
kA
MA2s
THERMAL AND MECHANICAL RATINGS
Symbol
Parameter
Test Conditions
Rth(j-c) Thermal resistance junction to case Double side cooled
DC
Rth(c-h) Thermal resistance case to heatsink Double side cooled
DC
Tvj
Virtual junction temperature
Blocking VDRM / VRRM
Tstg
Storage temperature range
Fm
Clamping force
Min.
-
-
-
-40
4
Max. Units
0.041
0.01
125
140
6
°C/W
°C/W
°C
°C
kN
2/9
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