CY7C1512-70 Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1512-70 Datasheet PDF : 8 Pages
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PRELIMINARY
CY7C1512
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND[1] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] .....................................–0.5V to VCC +0.5V
DC Input Voltage[1]..................................–0.5V to VCC +0.5V
Electrical Characteristics Over the Operating Range[3]
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage ........................................... >2001V
(per MIL–STD–883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature[2]
0°C to +70°C
–40°C to +85°C
VCC
5V ± 10%
5V ± 10%
7C1512-15 7C1512-20 7C1512-25
Parameter
Description
Test Conditions
Min. Max. Min. Max. Min. Max. Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
2.4
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
0.4
0.4 V
VIH
Input HIGH Voltage
2.2 VCC+ 2.2 VCC+ 2.2 VCC+ V
0.3
0.3
0.3
VIL
Input LOW Voltage[1]
–0.3 0.8 –0.3 0.8 –0.3 0.8 V
IIX
Input Load Current
GND < VI < VCC
–1 +1 –1 +1 –1 +1 µA
IOZ
Output Leakage Current
GND < VI < VCC,Output Disabled –5 +5 –5 +5 –5 +5 µA
IOS
Output Short Circuit Current[4] VCC = Max., VOUT = GND
–300
–300
–300 mA
ICC
VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
140
130
120 mA
ISB1
Automatic CE
Max. VCC, CE1 > VIH or
40
30
30 mA
Power–Down Current
CE2 < VIL, VIN > VIH or VIN < VIL,
— TTL Inputs
f = fMAX
ISB2
Automatic CE
Max. VCC, CE1 > VCC – 0.3V,
5
5
5 mA
Power–Down Current
or CE2 < 0.3V, VIN > VCC – 0.3V,
— CMOS Inputs
or VIN < 0.3V, f=0
7C1512-35
7C1512-70
Parameter
Description
Test Conditions
Min. Max. Min. Max. Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
0.4
V
VIH
Input HIGH Voltage
VIL
Input LOW Voltage[1]
2.2 VCC+ 0.3 2.2 VCC+ 0.3 V
–0.3
0.8
–0.3
0.8
V
IIX
Input Load Current
GND < VI < VCC
–1
+1
–1
+1
µA
IOZ
Output Leakage Current GND < VI < VCC, Output Disabled
–5
+5
–5
+5
µA
IOS
Output Short
Circuit Current[4]
VCC = Max., VOUT = GND
–300
–300
mA
ICC
VCC Operating
Supply Current
VCC = Max., IOUT = 0 mA,
f = fMAX = 1/tRC
ISB1
Automatic CE
Max. VCC, CE1 > VIH or CE2 < VIL,
Power-Down Current
VIN > VIH or VIN < VIL, f = fMAX
— TTL Inputs
110
110
mA
25
25
mA
ISB2
Automatic CE
Max. VCC, CE1 > VCC – 0.3V, or CE2 <
5
Power-Down Current
0.3V, VIN > VCC – 0.3V, or VIN < 0.3V, f=0
— CMOS Inputs
5
mA
Notes:
1. VIL (min.) = -2.0V for pulse durations of less than 20 ns.
2. TA is the “instant on” case temperature.
3. See the last page of this specification for Group A subgroup testing information.
4. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
2
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