FDU6644 Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDU6644 Datasheet PDF : 6 Pages
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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy Single Pulse, VDD = 15 V, ID=17A
IAR
Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate–Body Leakage, Forward
IGSSR
Gate–Body Leakage, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = 16 V, VDS = 0 V
VGS = –16 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 16 A
VGS = 4.5 V, ID = 15 A
VGS = 10 V, ID = 16.5A,TJ=125°C
VGS = 10 V, VDS = 5 V
VDS = 5 V,
ID = 16 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 15 V, ID = 16 A,
VGS = 5 V
Min
30
1
50
Typ Max Units
240 mJ
17
A
V
27
mV/°C
1
µA
100 nA
–100 nA
1.5
3
V
–5
mV/°C
6.5 8.5 mΩ
7.5 10.5
10 13
A
74
S
3087
pF
489
pF
185
pF
10 20
ns
12 22
ns
48 77
ns
10 20
ns
25 35
nC
7.5
6.5
FDD/FDU6644 Rev C(W)
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