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CPV362M4K

IGBT SIP MODULE Short Circuit Rated UltraFast IGBT

International Rectifier 

CPV362M4K

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ––– ––– V VGE = 0V, IC = 250µA

∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage

––– 0.49 ––– V/°C VGE = 0V, IC = 1.0mA

VCE(on)

Collector-to-Emitter Saturation Voltage ––– 1.70 1.93

IC = 3.0A

VGE = 15V

––– 1.98 ––– V IC = 5.7A

See Fig. 2, 5

––– 1.65 –––

IC = 3.0A, TJ = 150°C

VGE(th)

Gate Threshold Voltage

3.0 ––– 6.0

VCE = VGE, IC = 250µA

∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage

––– -13 ––– mV/°C VCE = VGE, IC = 250µA

gfe

Forward Transconductance „

2.0 3.0 ––– S VCE = 100V, IC = 12A

ICES

Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V

––– ––– 1700

VGE = 0V, VCE = 600V, TJ = 150°C

VFM

Diode Forward Voltage Drop

––– 1.4 1.7 V IC = 8A

See Fig. 13

––– 1.3 1.6

IC = 8A, TJ = 150°C

IGES

Gate-to-Emitter Leakage Current

––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Qg

Qge

Qgc

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

tsc

td(on)

tr

td(off)

tf

Ets

Cies

Coes

Cres

trr

Irr

Qrr

di(rec)M/dt

Parameter

Total Gate Charge (turn-on)

Gate - Emitter Charge (turn-on)

Gate - Collector Charge (turn-on)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Turn-On Switching Loss

Turn-Off Switching Loss

Total Switching Loss

Short Circuit Withstand Time

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Switching Loss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Diode Reverse Recovery Time

Diode Peak Reverse Recovery Current

Diode Reverse Recovery Charge

Diode Peak Rate of Fall of Recovery

During tb

Min. Typ. Max. Units

––– 38 57

––– 5.2 8 nC

––– 18 27

––– 23 –––

––– 54 ––– ns

––– 125 188

––– 120 180

––– 0.14 –––

––– 0.07 ––– mJ

––– 0.21 0.26

10 ––– ––– µs

––– 25 –––

––– 51 –––

––– 308 –––

––– 166 –––

––– 0.33 –––

––– 450 –––

––– 61 –––

––– 14 –––

––– 37 55

––– 55 90

––– 3.5 5.0

––– 4.5 8.0

––– 65 138

––– 124 360

––– 240 –––

––– 210 –––

ns

mJ

pF

ns

A

nC

A/µs

Conditions

IC = 3.0A

VCC = 400V

See Fig. 8

TJ = 25°C

IC = 3.0A, VCC = 480V

VGE = 15V, RG = 51Ω

Energy losses include "tail" and

diode reverse recovery.

See Fig. 9, 10, 18

VCC = 360V, TJ = 125°C

VGE = 15V, RG = 51Ω, VCPK < 500V

TJ = 150°C, See Fig. 10, 11, 18

IC =3.0A, VCC = 480V

VGE = 15V, RG = 51Ω

Energy losses include "tail" and

diode reverse recovery.

VGE = 0V

VCC = 30V

See Fig. 7

ƒ = 1.0MHz

TJ = 25°C See Fig.

TJ = 125°C

14

IF = 8A

TJ = 25°C See Fig.

TJ = 125°C

15

VR = 200V

TJ = 25°C See Fig.

TJ = 125°C

16 di/dt=200A/µs

TJ = 25°C See Fig.

TJ = 125°C

17

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