CM800HA-66H Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
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CM800HA-66H Datasheet PDF : 4 Pages
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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
1600
1200
800
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj=25°C
VGE=13V
VGE=14V
VGE=15V
VGE=20V
VGE=12V
VGE=11V
VGE=10V
1600
TRANSFER CHARACTERISTICS
(TYPICAL)
VCE=10V
1200
800
400
VGE=9V
VGE=8V
VGE=7V
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE VCE (V)
400
Tj = 25°C
Tj = 125°C
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
VGE=15V
6
4
2
Tj = 25°C
Tj = 125°C
0
0
400
800 1200 1600
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
8
IC = 1600A
IC = 800A
6
4
2
IC = 320A
0
0
4
8
12 16 20
GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
6
4
2
Tj = 25°C
Tj = 125°C
0
0
400
800 1200 1600
EMITTER CURRENT IE (A)
CAPACITANCE CHARACTERISTICS
(TYPICAL)
103
7 VGE = 0V, Tj = 25°C
5 Cies, Coes : f = 100kHz
3 Cres
2
: f = 1MHz
102
Cies
7
5
3
2
101
7
5
3
2
100
10–1 2 3
5 7 100 2 3
Coes
Cres
5 7 101 2 3 5 7 102
COLLECTOR-EMITTER VOLTAGE VCE (V)
Mar. 2003
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