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CM1244 Просмотр технического описания (PDF) - ON Semiconductor

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CM1244
ON-Semiconductor
ON Semiconductor ON-Semiconductor
CM1244 Datasheet PDF : 4 Pages
1 2 3 4
Table 1. PIN DESCRIPTIONS
5bump CSP Package
Pin
Name
Description
A1
ESD_1 ESD Channel 1
A3
ESD_2 ESD Channel 2
B2
GND
Device Ground
C1
ESD_3 ESD Channel 3
C3
ESD_4 ESD Channel 4
CM1244
PACKAGE / PINOUT DIAGRAMS
Orientation
Marking
(see Note)
A
B
Top View
(Bumps Down View)
123
+
04
C
Bottom View
(Bumps Up View)
Orientation
Marking
ESD_3
ESD_4
C1 GND C3
ESD_1 B2 ESD_2
A1
A3
A1
CM1244
CSP Package
Note: The “+” orientation marking indicates that the package
is leadfree.
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Rating
Units
Storage Temperature Range
–65 to +150
°C
DC Package Power Rating
200
mW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
–40 to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
VDIODE
ILEAK
VSIG
Diode Reverse Breakdown Voltage
Diode Leakage Current
Signal Voltage
Positive Clamp
Negative Clamp
IDIODE = 10 mA
TA = 25°C; VIN = 3.3 V
IDIODE = 10 mA
VESD
Insystem ESD Withstand Voltage
a) Human Body Model, MILSTD883,
Method 3015
b) Contact Discharge per IEC 6100042
(Note 2)
VCL
Clamping Voltage during ESD Discharge
MILSTD883 (Method 3015), 8 kV
Positive Transients
Negative Transients
(Note 2)
CDIODE
Diode Capacitance
At 2.5 VDC Reverse Bias,
1 MHz, 30 mVAC
1. TA = –40°C to +85°C unless otherwise specified.
2. ESD applied to input and output pins with respect to GND, one at a time.
Min Typ Max Units
5.5
V
100
nA
V
5.6
6.8
9.0
1.5 –0.8 0.4
kV
±30
±15
V
+15
–8
22
27
32
pF
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