CHA5290 Просмотр технического описания (PDF) - United Monolithic Semiconductors

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CHA5290

17.7-24GHz Medium Power Amplifier

United Monolithic Semiconductors 

CHA5290

18-24GHz Medium Power Amplifier

Electrical Characteristics

Tamb = +25°C, Vd = 6V Id =400mA

Symbol

Parameter

Fop Operating frequency range (1)

Min Typ Max Unit

17.7

24

GHz

G

Small signal gain (1)

24

26

dB

∆G

Small signal gain flatness (1)

±1

dB

Is

Reverse isolation

40

dB

P1dB Pulsed output power at 1dB compression (1)

25

26

dBm

P03 Output power at 3dB gain compression (1)

27

dBm

PAE Power added efficiency at 1dB comp.

18

%

VSWRin Input VSWR (2)

3:1

VSWRout Output VSWR (2)

3:1

Tj

Junction temperature for 80°C backside

165

°C

Id

Bias current @ small signal

400

500

mA

(1) These values are representative for pulsed on-wafer measurements that are made without

bonding wires at the RF ports.

(2) Value representative for CW on jig measurement.

Absolute Maximum Ratings

Tamb. = 25°C (1)

Symbol

Parameter

Values

Unit

Vd

Maximum drain bias voltage with Pin max=-2dBm

6.25

V

Id

Maximum drain bias current

625

mA

Vg

Gate bias voltage

-2.5 to +0.4

V

Ig

Gate bias current

-2.5 to +2.5

mA

Vgd

Minimum negative gate drain voltage ( Vg - Vd)

-8

V

Pin

Maximum input power overdrive (2)

3

dBm

Tch

Maximum channel temperature

175

°C

Ta

Operating temperature range

-40 to +80

°C

Tstg

Storage temperature range

-55 to +125

°C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

(2) Duration < 1s.

Ref. DSCHA52902295 -22-Oct.-02

2/6

Specifications subject to change without notice

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

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