IF9220 Просмотр технического описания (PDF) - Intersil
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IF9220 Datasheet PDF : 8 Pages
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IRFR9220, IRFU9220
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDSS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFR9220, IRFU9220
-200
-200
±20
3.6
Refer to Peak Current Curve
Refer to UIS Curve
42
0.33
-55 to 150
300
260
UNITS
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 150oC
VGS = ±20V
ID = 2.2A, VGS = -10V (Figure 9)
VDD = -100V, ID = 3.9A,
RL = 24Ω, VGS = -10V,
RGS = 18Ω
(Figures 13, 16, 17)
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate to Drain Charge
Gate to Source Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
td(OFF)
tf
tOFF
Qg(TOT)
Qgd
Qgs
CISS
COSS
CRSS
RθJC
RθJA
VGS = 0 to -10V
VDD = -160V,
ID = 3.9A,
RL = 41Ω
IG(REF) = 1.45mA
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 12)
MIN TYP MAX UNITS
-200 -
-
V
-2.0 - -4.0
V
-
-
-25
µA
-
- -250 µA
-
- ±100 nA
-
- 1.500 W
-
-
50
ns
- 8.8
-
ns
- 27
-
ns
- 7.3
-
ns
- 19
-
ns
-
-
50
ns
- 20
-
nC
- 11
-
nC
- 3.3
-
nC
- 550 -
pF
- 110 -
pF
- 33
-
pF
-
- 3.00 oC/W
-
-
100 oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
Reverse Recovery Charge
NOTES:
VSD
trr
QRR
ISD = -3.6A
ISD = -3.6A, dISD/dt = -100A/µs
-
- -6.3
- 150 300
0.97 2.0
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
V
ns
µC
4-90
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