C2611-TO-251 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Номер в каталоге

Компоненты Описание

Список матч

C2611-TO-251

TO-251 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-251 Plastic-Encapsulate Transistors

C 2611

TRANSISTOR（ NPN ）

FEATURES

Power dissipation

PCM : 1

Collector current

W（Tamb=25℃）

ICM : 0.2

A

Collector-base voltage

V(BR)CBO : 600 V

Operating and storage junction temperature range

TJ，Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS （ Tamb=25 ℃

unless otherwise specified）

TO— 251

1. EMITTER

2.COLLECTOR

3.BASE

　　　　 1 2 3

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

Ic= 100μA ，IE=0

600

V

Collector-emitter breakdown voltage V(BR)CEO IC= 1 mA , IB=0

400

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 100 μA，IC=0

7

　V

Collector cut-off current

ICBO

VCB= 600 V , IE=0

100 μA

Collector cut-off current

Emitter cut-off current

ICEO

VCE= 400 V , IB=0

IEBO

VEB= 7 V , IC=0

200 μA

100 μA

DC current gain

hFE（1）

VCE= 20 V, IC= 20m A

10

40

hFE（2）

VCE= 10V, IC= 0.25 m A

5

Collector-emitter saturation voltage

VCE(sat)

IC= 50mA, IB= 10 m A

0.5

V

Base-emitter saturation voltage

Transition frequency

Fall time

Storage time

CLASSIFICATION OF hFE(1)

Rank

VBE(sat)

fT

tf

tS

IC= 50 mA, IB= 10m A

VCE= 20 V, IC=20mA

8

f = 1MHz

IC=50mA,

IB1=-IB2=5mA,

VCC=45V

1.2

V

MHz

0.3 μs

1.5 μs

Range

10-15

15-20

20-25

25-30

30-35

35-40

Share Link: