C1226 Просмотр технического описания (PDF) - IMP, Inc

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C1226

CMOS 1.2µm 100V CMOS, Double Metal - Double Poly

IMP, Inc 

®

ISO 9001 Registered

Process C1226

CMOS 1.2µm

100V CMOS, Double Metal - Double Poly

Electrical Characteristics

T = 25oC Unless otherwise noted

Symbol

N-Channel High Voltage Transistor

Threshold Voltage

HVTN

Punch Through Voltage

HVBVDSSN

ON Resistance

HVPR0N

Operating Voltage

N-Channel Low Voltage Transistor

Threshold Voltage

VTN

Body Factor

γN

Conduction Factor

βN

Effective Channel Length

LeffN

Width Encroachment

∆WN

Punch Through Voltage

BVDSSN

Poly Field Threshold Voltage VTFPN

Minimum

0.70

120

550

0.30

64

5

8

Typical

0.90

700

VGS = 5V

VDS = 100V

0.45

0.475

78

1.35

0.4

12

15

Maximum

1.10

850

0.65

92

Unit Comments

V

V

Ω W/L = 147/5

V

V1/2

µA/V2

µm

µm

V

V

100x1.5µm

100x1.5µm

100x100µm

100x1.5µm

Per side

Symbol

P-Channel High Voltage Transistor

Threshold Voltage

HVTP

Punch Through Voltage

HVBVDSSP

ON Resistance

HVPR0N

Operating Voltage

P-Channel Low Voltage Transistor

Threshold Voltage

VTP

Body Factor

γP

Conduction Factor

βP

Effective Channel Length

LeffP

Width Encroachment

∆WP

Punch Through Voltage

BVDSSP

Poly Field Threshold Voltage VTFP(P)

Minimum

– 0.70

– 120

2000

-0.65

20

–5

–8

Typical

– 0.90

2500

VGS = 5V

VDS = 100V

– 0.45

0.6

25

1.5

0.4

–12

–12

Maximum

– 1.10

3000

– 0.30

30

Unit Comments

V

V

Ω W/L = 139/5

V

V

V1/2

µA/V2

µm

µm

V

V

100x1.5µm

100x1.5µm

100x100µm

100x1.5µm

Per side

© 2001 IMP, Inc.

69

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