MGFC45V3436A_04 Просмотр технического описания (PDF) - MITSUBISHI ELECTRIC
Номер в каталоге
Компоненты Описание
производитель
MGFC45V3436A_04 Datasheet PDF : 3 Pages
| |||
TYPICAL CHARACTERISTICS
P1dB,GLP vs. f
47
VDS=10V
46 IDS=8.0A
P1dB
45
44
GLP
43
42
41
40
3.3
3.4
3.5
3.6
FREQUENCY f (GHz)
42
VDS=10V
40 IDS=8A
f1=3.600GHz
38
f2=3.605GHz
2-tone test
36
Po,IM3 vs. f
Po
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V3436A
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
16
15
14
13
12
11
10
9
3.7
20
10
0
-10
Po, P.A.E. vs. Pin
46
100
44
VDS=10V
IDS=8A
42 f=3.5GHz
80
Po
40
38
60
36
34
40
32
30
20
P.A.E.
28
26
0
17 19 21 23 25 27 29 31 33 35 37
INPUT POWER Pin (dBm)
34
-20
32
-30
30
-40
IM3
28
-50
26
-60
24
16
18
20
22
24
26
28
INPUT POWER Pin (dBm S.C.L.)
-70
30
S parameters
( Ta=25deg.C , VDS=10(V),IDS=8(A) )
S-Parameter (TYP.)
f
S11
S21
S12
(GHz)
3.30
3.35
3.40
3.45
3.50
3.55
3.60
3.65
3.70
Magn.
0.45
0.51
0.56
0.59
0.61
0.62
0.62
0.61
0.58
Angle(deg)
137
119
104
91
81
70
59
51
38
Magn.
3.81
3.77
3.70
3.62
3.57
3.55
3.53
3.50
3.56
Angle(deg)
49
36
20
7
-3
-18
-29
-40
-55
Magn.
0.05
0.05
0.05
0.05
0.05
0.05
0.06
0.06
0.06
Angle(deg)
-14
-29
-45
-60
-71
-82
-99
-109
-124
S22
Magn. Angle(deg)
0.44
-29
0.41
-41
0.38
-52
0.34
-64
0.33
-78
0.33
-93
0.32
-106
0.32
-122
0.32
-133
MITSUBISHI
ELECTRIC
Share Link: 