IDT72V04L25J(1996) Просмотр технического описания (PDF) - Integrated Device Technology
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IDT72V04L25J
(Rev.:1996)
(Rev.:1996)
Integrated Device Technology
IDT72V04L25J Datasheet PDF : 13 Pages
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IDT72V01/72V02/72V03/72V04 3.3 VOLT CMOS ASYNCHRONOUS FIFO
512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9
COMMERCIAL TEMPERATURE RANGE
PIN CONFIGURATIONS
W1
D8
2
D3
3
D2
4
D1
5
D0
6
XI 7
FF 8
Q0
9
Q1
10
Q2
11
Q3
12
Q8
13
GND 14
28
VCC
27
D4
26
D5
25
D6
24
D7
23 FL/RT
22 RS
21 EF
20 XO/HF
19
Q7
18
Q6
17
Q5
16
Q4
15 R
2679 drw 02a
SMALL OUTLINE PACKAGE TO BE DETERMINED
INDEX
4 3 2 1 32 31 30
D2
5
29
D6
D1
6
28
D7
D0
7
27
NC
XI
8
FF
9
J32-1
26
FL/RT
25
RS
Q0
10
24
EF
Q1
11
23
XO/HF
NC
12
22
Q7
Q2
13
21
Q6
14 15 16 17 18 19 20
PLCC
TOP VIEW
2679 drw 02b
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Rating
Com’l.
Unit
VTERM
TA
TBIAS
TSTG
Terminal Voltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage
Temperature
–0.5 to +7.0
V
0 to +70
°C
–55 to +125
°C
–55 to +125
°C
IOUT
DC Output
Current
50
mA
NOTE:
2679 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliabilty.
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Rating
Min. Typ. Max. Unit
VCC
Supply Voltage
3.0
GND Supply Voltage
0
VIH(1) Input High Voltage 2.0
VIL(2) Input Low Voltage
—
3.3 3.6
V
0
0
V
— VCC+0.5 V
—
0.8 V
NOTE:
1. VIH = 2.6V for XI input (commercial).
2. 1.5V undershoots are allowed for 10ns once per cycle.
2679 tbl 03
CAPACITANCE (TA = +25°C, f = 1.0 MHz)
Symbol
Parameter(1)
Condition Max. Unit
CIN
COUT
Input Capacitance VIN = 0V
Output Capacitance VOUT = 0V
8
pF
8
pF
NOTE:
1. This parameter is sampled and not 100% tested.
2679 tbl 02
5.08
2
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