BYT01-400 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
Список матч
BYT01-400 Datasheet PDF : 5 Pages
| |||
BYT01-400
Fig. 7: Forward recovery time versus dIF/dt (90%
confidence).
tfr(ns)
100
80
IF=1A
Tj=100°C
60
40
20
0
0
dIF/dt(A/µs)
10 20 30 40 50 60 70 80 90 100
Fig. 8. Transient peak forward voltage versus
dIF/dt (90% confidence).
VFP(V)
15.0
IF=1A
Tj=100°C
12.5
10.0
7.5
5.0
2.5
0.0
0
dIF/dt(A/µs)
10 20 30 40 50 60 70 80 90 100
Fig. 9: Peak reverse recovery current versus
dIF/dt (90% confidence).
IRM(A)
2.5
IF=1A
VR=200V
2.0
1.5
Tj=100°C
1.0
0.5
0.0
1
Tj=25°C
dIF/dt(A/µs)
10
100
Fig. 10: Dynamic parameters versus junction
temperature.
%
300
IF=1A
dIF/dt=-50A/µs
Qrr
VR=30V
250
trr
200
IRM
150
Tj(°C)
100
25
50
75
100
125
150
Fig. 11: Non repetitive surge peak current versus
number of cycles.
IFSM(A)
35
30
Tj initial=25°C
25
20
15
10
5
Number of cycles
0
1
10
100
1000
4/5
Share Link: 